power transistors 1 publication date: april 2003 sjd00178bed 2SD1262, 2SD1262a silicon npn triple diffusion planar type darlington for midium speed power switching complementary to 2sb0939, 2sb0939a features ? high forward current transfer ratio h fe ? high-speed switching ? n type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification parameter symbol rating unit collector-base voltage 2SD1262 v cbo 60 v (emitter open) 2SD1262a 80 collector-emitter voltage 2SD1262 v ceo 60 v (base open) 2SD1262a 80 emitter-base voltage (collector open) v ebo 7v collector current i c 8a peak collector current i cp 12 a collector power dissipation p c 45 w t a = 25 c 1.3 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage 2SD1262 v ceo i c = 30 ma, i b = 0 60 v (base open) 2SD1262a 80 collector-base cutoff 2SD1262 i cbo v cb = 60 v, i e = 0 100 a current (emitter open) 2SD1262a v cb = 8 0 v, i e = 0 100 emitter-base cutoff current (collector open) i ebo v eb = 7 v, i c = 0 2 ma forward current transfer ratio h fe1 * v ce = 3 v, i c = 4 a1 000 10 000 ? h fe2 v ce = 3 v, i c = 8 a 500 collector-emitter saturation voltage v ce(sat) i c = 4 a, i b = 8 ma 1.5 v base-emitter saturation voltage v be(sat) i c = 4 a, i b = 8 ma 2.0 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 1 mhz 20 mhz turn-on time t on i c = 4 a 0.5 s strage time t stg i b1 = 8 ma, i b2 = ? 8 ma 4.0 s fall time t f v cc = 50 v 1.0 s 8.5 0.2 3.4 0.3 1.0 0.1 0 to 0.4 6.0 0.2 0.8 0.1 r = 0.5 r = 0.5 1.0 0.1 0.4 0.1 (8.5) (6.5) (6.0) 1.3 (1.5) (7.6) 2.54 0.3 1.4 0.1 5.08 0.5 123 1.5 0.1 2.0 0.5 10.0 0.3 1.5 +0 ?0.4 3.0 +0.4 ?0.2 4.4 0.5 4.4 0.5 14.4 0.5 rank r q p h fe1 1 000 to 2500 2 0 00 to 5 000 4 000 to 10 000 1: base 2: collector 3: emitter n-g1 package note) self-supported type package is also prepared. b c e internal connection
2SD1262, 2SD1262a 2 sjd00178bed v ce(sat) ? i c v be(sat) ? i c h fe ? i c p c ? t a i c ? v ce v ce(sat) ? i c 0 160 40 120 80 0 10 20 30 40 50 collector power dissipation p c (w) ambient temperature t a ( c) (1)t c =ta (2)with a 50 50 2mm al heat sink (3)without heat sink (p c =1.3w) (1) (2) (3) 0 05 12 4 3 12 10 8 6 4 2 collector current i c (a) collector-emitter voltage v ce (v) i b =4.0ma t c =25?c 3.5ma 3.0ma 2.5ma 2.0ma 1.5ma 1.0ma 0.5ma 10 1 0.1 0.01 0.1 1 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) (1) i c /i b =250 (2) i c /i b =500 (3) i c /i b =1000 t c =25?c (3) (1) (2) 10 1 0.1 0.01 0.1 1 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =500 t c =100?c 25?c ?5?c 0.1 10 1 0.01 0.1 1 10 base-emitter saturation voltage v be(sat) (v) collector current i c (a) i c /i b =500 25?c 100?c t c =?5?c 0.1 1 10 100 10 10 2 10 3 10 4 10 5 forward current transfer ratio h fe collector current i c (a) v ce =3v 25?c ?5?c t c =100?c 0.01 1 0.1 1 10 100 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) non repetitive pulse t c =25?c i cp i c t=10ms t=300ms t=1ms 2SD1262 2SD1262a safe operation area r th ? t 1 10 ? 2 10 ? 1 10 10 3 10 2 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) (1) (2) (1)without heat sink (2)with a 50 50 2mm al heat sink
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